leshan radio company, ltd. 1 base collector 3 general purpose transistors npn silicon 2 emitter ! !! ! absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ceo v ebo i c p c tj tstg 60 v v v a ?c ?c 50 7 0.15 w 0.15 150 ? 55~ + 150 symbol limits unit ! !! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? ? 180 2.0 ? ? ? 0.1 0.1 560 0.5 ? 3.5 vi c = 50 a i c = 1 i e = 50 a v cb = 60v v eb = 7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v ce = 12v, i e = 2ma, f = 30mhz v cb = 12v, i e = 0a, f = 1mhz v v a a ? v mhz pf typ. max. unit conditions sc-89 h f e v a lue s a r e cla s si f ie d a s f o ll o w s : item q r s h fe 120~270 180~390 270~560 ! ! ! ! device marking ! ! ! ! (s-)l2sc4617qt1g=bq (s-) l2sc4617rt1g=br (s-) l2sc4617st1g=bs z we declare that the material of product compliance with rohs requirements. device marking shipping bq br 3000 tape & reel 10000 tape & reel 3000 tape & reel 10000 tape & reel 3000 tape & reel 10000 tape & reel ordering information br bq l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g bs bs s-l2sc4617qt1g series ma rev.o 1/4 l2sc4617qt1g series z s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-l2sc4617qt1g s-l2sc4617qt3g s-l2sc4617rt1g s-l2sc4617rt3g s-l2sc4617st1g s-l2sc4617st3g
leshan radio company, ltd. ! !! ! electrical characterristic curves fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100 c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25 c ? 55 c fig.2 grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 c i b =0a 0.40ma 0.50ma 0.45ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.3 grounded emitter output characteristics ( ? ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 c fig.4 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 c ? 55 c ta=100 c v ce = 5v fig.5 dc current gain vs. collector current ( ? ) dc current gain : h fe collector current : i c (ma) fig. 6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 c l2sc4617qt1g series rev.o 2/4 s-l2sc4617qt1g series
fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 c 25 c ? 55 c fig.8 collector-emitter saturation voltage vs. collector current ( ? ) collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 c 25 c ? 55 c fig.9 gain bandwidth product vs. emitter current 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25 c f = 1mhz i e =0a i c =0a cib fig.11 base-collector time constant vs. emitter current ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25 c f=32mh z v cb =6v leshan radio comp any , ltd. rev.o 3/4 l2sc4617qt1g series s-l2sc4617qt1g series
g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m --- --- 10 --- n --- --- 10 --- s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref --- 10 --- 10 0.063 0.067 max max m h h l g recommended pattern of solder pads s leshan radio company, ltd. s c - 8 9 rev.o 4/4 l2sc4617qt1g series s-l2sc4617qt1g series
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